Excellent adhesion

Chemical adsorption of the precursor onto the base material ensures excellent adhesion.

Saturated adsorption characteristics

The self-limiting nature of the surface reaction makes it possible to automate the process without the need for precise dose control and continuous operator intervention.

Ordered reaction

The ordered growth of the film provides extremely high film accuracy without in-situ feedback or operator intervention.

Surface controlled reaction

The surface reaction ensures the high conformity of the film under any condition, whether the substrate material is dense, porous, tubular, powdery or with other complex shapes.

Accuracy and repeatability

Per-cycle film thickness is determined by the process, but is usually 1A(0.1 nm).

Ultra-thin, dense and flat

ALD can deposit films less than 1 nm-thick.  In some industrial applications, the film thickness is only 0.8 nm.

High productivity

Surface controlled growth characteristics make it possible to expand productivity by increasing batch size and substrate area.

Plasma-enhanced ALD

Films of some metals, low temperature oxides and nitrides can be prepared by using plasma during atomic layer deposition. 

Roll-to-roll and continuous ALD

Roll-to-roll film deposition opens the door to many entirely new applications, such as the flexible electronics industry.  

ALD for particles and powders

Combining conform coatings with granulated substrates creates a number of novel applications, such as altering the diffusion properties of battery materials.  

Power device  ALD plays important roles in power devices.  Among them, the film deposited by ALD process has controllable thickness, excellent replacement coverage. A number of high- breakdown voltage materials and devices include:   GaN, SiC, traditional IGBT and other thin film materials, which involve the deposition of high-k dielectric film, including the deposition of gate insulation layer with low interface state.  GaN  GaN is widely used in chargers because of its high thermal conductivity and wide band gap, which can be adapted to small transformers and high power devices to achieve high efficiency charging effect.  GaN films with controllable thickness can be deposited without damage by ALD method, so as to achieve the advantages of high efficiency in devices. 

Radio Frequency Device (RF)  

MOS and RFFE semiconductor devices using Group III-V materials in the periodic table requires metal oxide to realize a controllable layer of passivation. ALD process can be used to control the thickness of such surface passivation layer, and deposit high-dielectric-constant material stack to control the interface quality.

Ferroelectric storage

Ferroelectric material is a kind of material which has spontaneous polarization and this polarization can change under the action of external electric field.  Therefore, ultra-thin ferroelectrics are of great significance for high density electronic devices, especially for FET and non-volatile memory. The existence of inversion symmetry failure and switchable electrical polarization in ultra-thin ferroelectric materials grown by low-temperature ALD was determined by the generation of second harmonics and advanced scanning probe technology, respectively. The efficiency and application range of ferroelectric storage are greatly improved.