Elegant II-A
Technical indicators:
Sample: up to 12 inches, downward compatible, customizable
Process temperature: RT ~ 300℃, high temperature module can be customized for higher temperature.
Foredrive source pipeline: up to 6 independent pipelines can be customized
Low pressure source heating system: including source bottle and pipeline, RT ~ 200℃
Vacuum system: high performance mechanical pump, can be customized semiconductor molecular pump
Growth mode: Normal growth, stay growth, plasma enhancement (customizable)
Plasma source: 0-3000W RPS, customizable
Plasma discharge gas source: maximum 4 independent pipes, can be customized
Control system: independently developed operating system + touch screen
Power supply: 50-60Hz, 380V/20A AC power supply
Uniformity: Al2O3 non-uniformity < ±1%
Application examples:
High-k gate oxide layer, dielectric materials for supercapacitors, High aspect ratio (such as TSV) structure seed layer or barrier layer, piezoelectric materials in MEMS, anti-reflection or High permeability optical lens film, passivation layer and carrier transport layer for solar cells, flat panel display, other kinds of special nano films.
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