Sample: up to 12 inches, downward compatible, customizable
Process temperature: RT ~ 300℃, high temperature module can be customized for higher temperature.
Foredrive source pipeline: up to 6 independent pipelines can be customized
Low pressure source heating system: including source bottle and pipeline, RT ~ 200℃
Vacuum system: high performance mechanical pump, can be customized semiconductor molecular pump
Growth mode: Normal growth, stay growth, plasma enhancement (customizable)
Plasma source: 0-3000W RPS, customizable
Plasma discharge gas source: maximum 4 independent pipes, can be customized
Control system: independently developed operating system + touch screen
Power supply: 50-60Hz, 380V/20A AC power supply
Uniformity: Al2O3 non-uniformity < ±1%
High-k gate oxide layer, dielectric materials for supercapacitors, High aspect ratio (such as TSV) structure seed layer or barrier layer, piezoelectric materials in MEMS, anti-reflection or High permeability optical lens film, passivation layer and carrier transport layer for solar cells, flat panel display, other kinds of special nano films.
Grace-MX is the first generation of multi-layer flat atomic layer deposition (ALD) system independently developed by ANAME. Adopt unique modular design, through the optimization of cavity and precursor source air intake system, realized the high process stability, and support process of all-round development, including mems, optics, such as chemical and industrial applications, and the development of material covered many oxides (for example SiO2, SnO2, HfO2, Al2O3, etc.), The maximum sample size can be 300mm*300mm, according to the research and development of different fields, the maximum sample size and number of layers can be customized according to customer needs.
ALD/ALE Elegant II-Y
ELEGANT II-Y is the second generation of ALD/ALE equipment developed by ANAME, with full proprietary intellectual property rights. The product is CE certified. This series adopts double cavity design to ensure the stability of deposition and efficient source utilization. At the same time, the vacuum transport system developed by our company can realize one-click operation, reduce manual intervention and the possibility of contamination. The series also reserves several upgrade ports for both plasma enhancement and ozone processes, which are particularly suitable for thin film deposition with pan-semiconductors, compounds, special memories, MEMS and optical devices.
BAT 300 R2R
Double chamber design self-developed by ANAME ensures high utilization rate of precursor; Proprietary gas flow and heating methods to ensure high uniformity; Unique cavity structure to avoid cross-contamination between different processes, convenient maintenance; Modular design, adjustable electrical and gas cabinet positions, independent sampling space, compatible with high-level clean room production space; Large batch wafer processing capacity to reduce production and equipment costs; Compatible with various sizes of samples, easy to upgrade; Currently the world's most cost-effective industrial machine.
Sales Tel: 15655060066 Manager Pan (Sales 1)
13770542509 Manager Long (Sales Department 2)
15895990041 Manager Zhang (Sales Department 3)
Customer service telephone: 13815424556, 18915976831
Address: 22nd Floor, Building B, Qingyun Mansion, No.266 Puyun Road, Jiangbei New District, Nanjing