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Grace-MX

Grace-MX is the first generation of multi-layer flat atomic layer deposition (ALD) system independently developed by ANAME. Adopt unique modular design, through the optimization of cavity and precursor source air intake system, realized the high process stability, and support process of all-round development, including the integrated circuit, mems, optics, such as chemical and industrial applications, and the development of material covered many oxides (for example SiO2, SnO2, HfO2, Al2O3, etc.), The maximum sample size can be 300mm*300mm, according to the research and development of different fields, the maximum sample size and number of layers can be customized according to customer needs.
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Technical specifications:

Sample size：Maximum sample size: 300mm*300mm.

Process temperature:RT ~ 450℃, high temperature module can be customized for higher temperature.

Source line:up to 6 independent lines can be built.

Low pressure source heating system:include source container and line, RT ~ 200℃

Vacuum system:high performance mechanical pump, semiconductor-grade molecular pump can be integrated.

Growth mode:Normal growth, diffusion-enhanced growth.

Control system:in-house developed operating system + touch screen.

Power supply:50-60Hz, 380V/20A AC power supply.

Uniformity:Al2O3 non-uniformity < 1%.

Application examples:  

High-k gate oxide layer, dielectric materials for super-capacitors, High aspect ratio (such as TSV) structure seed layer or barrier layer, piezoelectric materials in MEMS, anti-reflection or high transmission optical lens film, passivation layer and carrier transport layer for solar cells, flat panel display, other kinds of special nano-films.

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