Grace-MX
Technical specifications:
Sample size:Maximum sample size: 300mm*300mm.
Process temperature:RT ~ 450℃, high temperature module can be customized for higher temperature.
Source line:up to 6 independent lines can be built.
Low pressure source heating system:include source container and line, RT ~ 200℃
Vacuum system:high performance mechanical pump, semiconductor-grade molecular pump can be integrated.
Growth mode:Normal growth, diffusion-enhanced growth.
Control system:in-house developed operating system + touch screen.
Power supply:50-60Hz, 380V/20A AC power supply.
Uniformity:Al2O3 non-uniformity < 1%.
Application examples:
High-k gate oxide layer, dielectric materials for super-capacitors, High aspect ratio (such as TSV) structure seed layer or barrier layer, piezoelectric materials in MEMS, anti-reflection or high transmission optical lens film, passivation layer and carrier transport layer for solar cells, flat panel display, other kinds of special nano-films.
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