Elegant II-A

Grace-Mx is the first generation of multi-layer flat atomic layer deposition (ALD) system independently developed by ANAME. Adopt unique modular design, through the optimization of cavity and precursor source air intake system, realized the high process stability, and support process of all-round development, including mems, optics, such as chemical and industrial applications, and the development of material covered many oxides (for example SiO2, SnO2, HfO2, Al2O3, etc.), The maximum sample size can be 300mm*300mm, according to the research and development of different fields, the maximum sample size and number of layers can be customized according to customer needs.

ELEGANT II-Y is the second generation of ALD/ALE equipment developed by ANAME, with full proprietary intellectual property rights. The product is CE certified.  This series adopts double cavity design to ensure the stability of deposition and efficient source utilization.  At the same time, the vacuum transport system developed by our company can realize one-click operation, reduce manual intervention and the possibility of contamination.  The series also reserves several upgrade ports for both plasma enhancement and ozone processes, which are particularly suitable for thin film deposition with pan-semiconductors, compounds, special memories, MEMS and optical devices.

The mature mass production version of The Elegant II-Y series has been added with a fully self-developed automatic wafer loading and transfer system, which can load 25 6/8 "wafers at one time using standard or custom Cassette, making it ideal for pilot or final test applications. The wafer loading system, equipped with sophisticated stepper motors and sensors, enables precise wafer positioning and counting, as well as precise wafer loading and unloading with a robotic arm. The same dual cavity and separate source inlet design ensures source utilization and reduces cross-contamination. Several upgrade ports allow plasma intensification and thermal processes to be implemented in the same vacuum chamber, making it particularly suitable for mass production of compound semiconductor devices.