The low-temperature selective epitaxial platform developed by ANAME has achieved a series of breakthrough innovations in manufacturing, energy consumption, and production efficiency, and has become the third type of epitaxial equipment in terms of heating lamp design in the world. This equipment can be used for silicon based homogeneous and heterogeneous epitaxial growth on 8/12 inch logic, memory, and epitaxial wafers. The loadlock of the equipment adopts a double-layer design, which takes into account both wafer loading/unloading and cooling; The innovative pre-treatment system design can achieve high-quality surface treatment while minimizing substrate damage; The wafer handling system is able to realize significant throughput improvement by optimizing the grabbing, placement, lift and temperature control of the wafer. The platform can be configured with a total of 2 pre-treatment and 4 EPI process chambers, which can fully meet the production requirements of mainstream foundries.