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Product Description
Specifications
● Wafer size: 8/12 inch, customizable
● Process model: PE, Thermal
● Loading capacity: single wafer/chamber, max 10 chambers
● Process temperature: room temperature~500°C
● Precursor lines: max 6 independent lines per chamber
● Compatible processes: oxides like AlO、HfO、AIN、TiIN、SiN、Ru、Co, nitrides and metals
● Application field: Advanced IC, memory and wafer fabrication
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