Precursors and other service

The low-temperature selective epitaxial platform developed by ANAME has achieved a series of breakthrough innovations in manufacturing, energy consumption, and production efficiency, and has become the third type of epitaxial equipment in terms of heating lamp design in the world. This equipment can be used for silicon based homogeneous and heterogeneous epitaxial growth on 8/12 inch logic, memory, and epitaxial wafers. The loadlock of the equipment adopts a double-layer design, which takes into account both wafer loading/unloading and cooling; The innovative pre-treatment system design can achieve high-quality surface treatment while minimizing substrate damage; The wafer handling system is able to realize significant throughput improvement by optimizing the grabbing, placement, lift and temperature control of the wafer. The platform can be configured with a total of 2 pre-treatment and 4 EPI process chambers, which can fully meet the production requirements of mainstream foundries.

ANAME’s cluster ALD is a key thin film deposition equipment for advanced integrated circuit technology built on our proprietary Elegant Cluster platform. It is mainly used in the production of 8/12 inch logic, memory devices and can meet various thin film deposition needs such as oxides, nitrides, and metals. This equipment achieves seamless connection between PE and thermal processes, greatly improving process stability and production efficiency. Among them, the thermal ALD process chamber is equipped with plasma self-cleaning function, which helps improve equipment reliability and lengthen the PM cycles, further enhancing performance and competitiveness. The various specifications of this platform have reached the international advanced level and have been recognized by multiple customers.

PC 10 is a cluster-type ALD equipment developed by ANAME, aiming for mass production customers in IC and compound semiconductor field. It consists of a self-developed VTM system and 8-10 process chambers, with each being able to effectively control oxygen content in nitride films through the use of high-speed turbo-molecular pumps. In addition, the system is equipped with 2 cooling stations with a wafer cooling capacity of 10 pieces each. It also has 2 loadlocks that can hold 25 pieces of wafer each. The uniquely designed process chamber and plasma treatment technology not only guarantees a good thermal and flow field, but also significantly reduces damage to local films. The system is easy to maintain. The integrated weight lifting system greatly reduces the time required for assembly, checkups and maintenance.

Grace-Mx is the first generation of multi-layer flat atomic layer deposition (ALD) system independently developed by ANAME. Adopt unique modular design, through the optimization of cavity and precursor source air intake system, realized the high process stability, and support process of all-round development, including mems, optics, such as chemical and industrial applications, and the development of material covered many oxides (for example SiO2, SnO2, HfO2, Al2O3, etc.), The maximum sample size can be 300mm*300mm, according to the research and development of different fields, the maximum sample size and number of layers can be customized according to customer needs.