Advanced Cluster Tura 12” Single-wafer ALD Series
The thermal ALD process chamber is equipped with self-cleaning function using ICP plasma, which helps improve the equipment reliability and reduce PM frequency, further enhancing its performance and competitiveness. It can be equipped with 1-6 single-wafer process chambers. Process temperature range from RT to 500oC. Upgradable components include up to 6 independent precursor lines, precursor heating (RT to 300oC) and higher temperature modules, etc. ALD materials that can be deposited include oxides, nitrides, metals such as SiO2, SnO2, HfO2, Al2O3, AlN, SiN, TiN, Ru, Co, HZO, etc.
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13815424556Manager Zhang (North China, Northwest China, Northeast China)
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