ALD/ALE Elegant II-Y
Sample size: up to 12 inches, downward compatible, customizable
Process temperature: RT ~ 400℃, high temperature module can be customized for higher temperature.
Source line: up to 6 independent lines can be built.
Low pressure source heating system: include source container and line, RT ~ 200℃
Vacuum system: high performance mechanical pump, semiconductor-grade molecular pump can be integrated
Growth mode: Normal growth, diffusion-enhanced growth, plasma enhancement (customizable)
Plasma source: RF,mircrowave，customizable
Plasma discharge gas source: maximum 4 independent lines, customizable
Control system: in-house developed operating system + touch screen
Power supply: 50-60Hz, 380V/20A AC power supply
Uniformity: Al2O3 non-uniformity < 1%
Grace-MX is the first generation of multi-layer flat atomic layer deposition (ALD) system independently developed by ANAME. Adopt unique modular design, through the optimization of cavity and precursor source air intake system, realized the high process stability, and support process of all-round development, including mems, optics, such as chemical and industrial applications, and the development of material covered many oxides (for example SiO2, SnO2, HfO2, Al2O3, etc.), The maximum sample size can be 300mm*300mm, according to the research and development of different fields, the maximum sample size and number of layers can be customized according to customer needs.
ALD/ALE Elegant II-Y
ELEGANT II-Y is the second generation of ALD/ALE equipment developed by ANAME, with full proprietary intellectual property rights. The product is CE certified. This series adopts double cavity design to ensure the stability of deposition and efficient source utilization. At the same time, the vacuum transport system developed by our company can realize one-click operation, reduce manual intervention and the possibility of contamination. The series also reserves several upgrade ports for both plasma enhancement and ozone processes, which are particularly suitable for thin film deposition with pan-semiconductors, compounds, special memories, MEMS and optical devices.
BAT 300 R2R
Double chamber design self-developed by ANAME ensures high utilization rate of precursor; Proprietary gas flow and heating methods to ensure high uniformity; Unique cavity structure to avoid cross-contamination between different processes, convenient maintenance; Modular design, adjustable electrical and gas cabinet positions, independent sampling space, compatible with high-level clean room production space; Large batch wafer processing capacity to reduce production and equipment costs; Compatible with various sizes of samples, easy to upgrade; Currently the world's most cost-effective industrial machine.