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ALD/ALE Elegant II-Y
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ALD/ALE Elegant II-Y

ELEGANT II-Y is the second generation of ALD/ALE equipment developed by ANAME, with full proprietary intellectual property rights. The product is CE certified.  This series adopts double cavity design to ensure the stability of deposition and efficient source utilization.  At the same time, the vacuum transport system developed by our company can realize one-click operation, reduce manual intervention and the possibility of contamination.  The series also reserves several upgrade ports for both plasma enhancement and ozone processes, which are particularly suitable for thin film deposition with pan-semiconductors, compounds, special memories, MEMS and optical devices.
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R&D Machine
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Product Description

Technical specifications:

Sample size: up to 12 inches, downward compatible, customizable

Process temperature: RT ~ 400℃, high temperature module can be customized for higher temperature.

Source line: up to 6 independent lines can be built.

Low pressure source heating system: include source container and line, RT ~ 200℃

Vacuum system: high performance mechanical pump, semiconductor-grade molecular pump can be integrated

Growth mode: Normal growth, diffusion-enhanced growth, plasma enhancement (customizable)

Plasma source: RF,mircrowavecustomizable

Plasma discharge gas source: maximum 4 independent lines, customizable

Control system: in-house developed operating system + touch screen

Power supply: 50-60Hz, 380V/20A AC power supply

Uniformity: Al2O3 non-uniformity < 1%

Keyword:
ALD/ALE ElegantⅡ
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