中文
yuya Language

中文版

English

PRODUCT CENTER
Atomic Nano-Materials and Equipments Co.,Ltd
current position:
Homepage
/
Product Description
/
R&D Machine
/
ALD/ALE Elegant II-Y
1/1
Number of views:
1000

ALD/ALE Elegant II-Y

ELEGANT II-Y is the second generation of ALD/ALE equipment developed by ANAME, with full proprietary intellectual property rights. The product is CE certified.  This series adopts double cavity design to ensure the stability of deposition and efficient source utilization.  At the same time, the vacuum transport system developed by our company can realize one-click operation, reduce manual intervention and the possibility of contamination.  The series also reserves several upgrade ports for both plasma enhancement and ozone processes, which are particularly suitable for thin film deposition with pan-semiconductors, compounds, special memories, MEMS and optical devices.
Retail price
0.0
元
Market price
0.0
元
Number of views:
1000
Product serial number
Category
R&D Machine
Quantity
-
+
1
Product Description

Technical specifications:

Sample size: up to 12 inches, downward compatible, customizable

Process temperature: RT ~ 400℃, high temperature module can be customized for higher temperature.

Source line: up to 6 independent lines can be built.

Low pressure source heating system: include source container and line, RT ~ 200℃

Vacuum system: high performance mechanical pump, semiconductor-grade molecular pump can be integrated

Growth mode: Normal growth, diffusion-enhanced growth, plasma enhancement (customizable)

Plasma source: RF,mircrowave，customizable

Plasma discharge gas source: maximum 4 independent lines, customizable

Control system: in-house developed operating system + touch screen

Power supply: 50-60Hz, 380V/20A AC power supply

Uniformity: Al2O3 non-uniformity < 1%

Keyword:
ALD/ALE ElegantⅡ
We could not find any corresponding parameters, please add them to the properties table
Previous
None
Next
Elegant II-A

Related Products

Grace-Mx

Grace-Mx

Grace-Mx is the first generation of multi-layer flat atomic layer deposition (ALD) system independently developed by ANAME. Adopt unique modular design, through the optimization of cavity and precursor source air intake system, realized the high process stability, and support process of all-round development, including mems, optics, such as chemical and industrial applications, and the development of material covered many oxides (for example SiO2, SnO2, HfO2, Al2O3, etc.), The maximum sample size can be 300mm*300mm, according to the research and development of different fields, the maximum sample size and number of layers can be customized according to customer needs.

更多

Elegant II-A

Elegant II-A

更多

ALD/ALE Elegant II-Y

ALD/ALE Elegant II-Y

ELEGANT II-Y is the second generation of ALD/ALE equipment developed by ANAME, with full proprietary intellectual property rights. The product is CE certified.  This series adopts double cavity design to ensure the stability of deposition and efficient source utilization.  At the same time, the vacuum transport system developed by our company can realize one-click operation, reduce manual intervention and the possibility of contamination.  The series also reserves several upgrade ports for both plasma enhancement and ozone processes, which are particularly suitable for thin film deposition with pan-semiconductors, compounds, special memories, MEMS and optical devices.

更多

Elegant II-A

Elegant II-A

The mature mass production version of The Elegant II-Y series has been added with a fully self-developed automatic wafer loading and transfer system, which can load 25 6/8 "wafers at one time using standard or custom Cassette, making it ideal for pilot or final test applications. The wafer loading system, equipped with sophisticated stepper motors and sensors, enables precise wafer positioning and counting, as well as precise wafer loading and unloading with a robotic arm. The same dual cavity and separate source inlet design ensures source utilization and reduces cross-contamination. Several upgrade ports allow plasma intensification and thermal processes to be implemented in the same vacuum chamber, making it particularly suitable for mass production of compound semiconductor devices.

更多

搜索
Search