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Cluster-A300 series

Product Highlights
  • The transmission chamber can accommodate 6-10 process chambers allowing for free combination of PE and Thermal processes
  • Thermal ALD process chamber configuration with plasma cleaning function
  • Thermal ALD process chamber can achieve single batch production process
  • ALD process cavity switchable for MLD process
  • The self-developed software control system seamlessly integrates with SEMI standard protocol or user specific protocol
  • Can be applied to advanced CMOS gate stack deposition of dielectric and metal layers
  • Integrate ALD and PVD as well as ALD and CVD technologies to optimize tungsten filling processes and achieve smaller contact resistance
  • Complies with SEMI standards
Specifications
  • Wafer size 8/12 inch customizable
    Process Type PE、Thermal
    Applicable process Al203 HfO2 AlN TiN SiN Ru Co and other oxides nitrides and metals
    Application Advanced logic storage etc. below 28nm

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