Product Highlights

• The EPI-M300 series equipment can be optionally equipped with dual or four chambers to match different production capacities

• It can achieve atmospheric or low-pressure epitaxy (selective) and prepare various lattice materials of homogeneous and heterogeneous silicon and germanium

• High temperature process of thick epitaxial silicon material (dopable) can achieve stable generation

• Two surface pre-treatment chambers can be configured simultaneously

• The unique infrared heating system design is easy to maintain reliable and highly efficient greatly improving process temperature stability

• Significant improvements in temperature measurement and wafer support reaction seat system design can avoid contamination and stress issues during the process

• Reliable control of airflow uniformity is achieved through optimized design of inlet and outlet structures and precise real-time flow monitoring feedback system

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